Commercially available InGaAs/InP avalanche photodiodes, designed for optical receivers and range-finders, can be operated even biased above the breakdown voltage, achieving single-photon sensitivity. In this paper we describe in detail how to select the device for photon counting applications among commercial samples. Due to the high dark-counting rate the detector must be cooled below 100K and operated in gated mode. We have achieved Noise Equivalent Power of 3E-16W/HzE1/2 up to 1.55µm-wavelength and time resolution well below 1ns, with a best value of 200ps FWHM. Finally we compare these figures with the performance of state-of-the-art detectors in the near-infrared and we highlight the potentials of properly designed InGaAs/InP avalanche photodiodes in single-photon detection.

Single-photon detection beyond 1µm: performance of commercially available InGaAs/InP detectors

LACAITA, ANDREA LEONARDO;ZAPPA, FRANCO;COVA, SERGIO;
1996

Abstract

Commercially available InGaAs/InP avalanche photodiodes, designed for optical receivers and range-finders, can be operated even biased above the breakdown voltage, achieving single-photon sensitivity. In this paper we describe in detail how to select the device for photon counting applications among commercial samples. Due to the high dark-counting rate the detector must be cooled below 100K and operated in gated mode. We have achieved Noise Equivalent Power of 3E-16W/HzE1/2 up to 1.55µm-wavelength and time resolution well below 1ns, with a best value of 200ps FWHM. Finally we compare these figures with the performance of state-of-the-art detectors in the near-infrared and we highlight the potentials of properly designed InGaAs/InP avalanche photodiodes in single-photon detection.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/559526
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