Time-Resolved Photoluminescence Measurements of InGaAs/InP Multiple Quantum Well Structures at 1.3μm wavelenghts by use of Germaniun Single-Photon Avalanche Diodes

A commercially available germanium avalanche photodiode operating in the single-photon-counting mode has been used to perform time-resolved photoluminescence measurements on InGaAs/lnP multiple-quantum-well structures. Photoluminescence in the spectral region of 1.3-1.48 µm was detected with picosecond timing accuracy by use of the time-correlated single-photon counting technique. The carrier dynamics were monitored for excess photogenerated carrier densities in the range 1018-1015 cm-3. The recombination time is compared for similar InGaAs-based quantum-well structures grown by use of different epitaxial processes.