A detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented. An original bandgap model consistent with the microscopic structure of both crystalline and amorphous chalcogenide is described, and a physical picture of the switching mechanism is proposed. Numerical simulations provide, for the first time, a quantitative description of the peculiar current–voltage curve of a Ge2Sb2Te5 resistor, in good agreement with measurements performed on test devices.
Electronic switching in phase-change memories
LACAITA, ANDREA LEONARDO;
2004-01-01
Abstract
A detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented. An original bandgap model consistent with the microscopic structure of both crystalline and amorphous chalcogenide is described, and a physical picture of the switching mechanism is proposed. Numerical simulations provide, for the first time, a quantitative description of the peculiar current–voltage curve of a Ge2Sb2Te5 resistor, in good agreement with measurements performed on test devices.File in questo prodotto:
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