Direct copper deposition by electrochemical methods on diffusion barriers has been recently investigated. Structure and properties of copper films growing according to a three dimensional island growth mode are expected to be strongly affected by the mechanism and kinetics of nucleation. The electrodeposition of copper on PVD TiN from low acid sulfate electrolyte is studied. Nucleation and growth of copper films are evaluated to explore the feasibility of direct copper electrodeposition on TiN barriers as a reliable deposition method without the use of seed layers.
Nucleation and growth of ECD Cu on PVD TiN from low acid sulfate electrolyte
MAGAGNIN, LUCA;VICENZO, ANTONELLO;CAVALLOTTI, PIETRO LUIGI
2004-01-01
Abstract
Direct copper deposition by electrochemical methods on diffusion barriers has been recently investigated. Structure and properties of copper films growing according to a three dimensional island growth mode are expected to be strongly affected by the mechanism and kinetics of nucleation. The electrodeposition of copper on PVD TiN from low acid sulfate electrolyte is studied. Nucleation and growth of copper films are evaluated to explore the feasibility of direct copper electrodeposition on TiN barriers as a reliable deposition method without the use of seed layers.File in questo prodotto:
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Microelectronic Engineering 76_2004_131–136.pdf
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