Direct copper deposition by electrochemical methods on diffusion barriers has been recently investigated. Structure and properties of copper films growing according to a three dimensional island growth mode are expected to be strongly affected by the mechanism and kinetics of nucleation. The electrodeposition of copper on PVD TiN from low acid sulfate electrolyte is studied. Nucleation and growth of copper films are evaluated to explore the feasibility of direct copper electrodeposition on TiN barriers as a reliable deposition method without the use of seed layers.

Nucleation and growth of ECD Cu on PVD TiN from low acid sulfate electrolyte

MAGAGNIN, LUCA;VICENZO, ANTONELLO;CAVALLOTTI, PIETRO LUIGI
2004-01-01

Abstract

Direct copper deposition by electrochemical methods on diffusion barriers has been recently investigated. Structure and properties of copper films growing according to a three dimensional island growth mode are expected to be strongly affected by the mechanism and kinetics of nucleation. The electrodeposition of copper on PVD TiN from low acid sulfate electrolyte is studied. Nucleation and growth of copper films are evaluated to explore the feasibility of direct copper electrodeposition on TiN barriers as a reliable deposition method without the use of seed layers.
2004
Copper; Titanium nitride; Electrodeposition; Diffusion barrier; Seed layer
File in questo prodotto:
File Dimensione Formato  
Microelectronic Engineering 76_2004_131–136.pdf

Accesso riservato

: Altro materiale allegato
Dimensione 423.45 kB
Formato Adobe PDF
423.45 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/555582
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 10
  • ???jsp.display-item.citation.isi??? ND
social impact