A multiscale–multi-hierarchy approach, based on a succession of simplified models, was used to describe the deposition and the film morphology evolution during the epitaxial silicon carbide deposition in an industrial hot wall reactor. The attention was focused on the system involving chlorinated species because of its superior performances with respect the traditional silane/hydrocarbons process. The evolution of the crystalline structure (i.e., from poly to single) and of the surface roughness can be understood by simply comparing two characteristic times, like those inherent the surface diffusion and the matter supply to the surface. Two other characteristic times were introduced to describe through a kinetic Monte Carlo model the line defects formation.

Multiscale simulation for epitaxial silicon carbide growth by chlorides route

MASI, MAURIZIO;FIORUCCI, ALESSANDRO;
2010

Abstract

A multiscale–multi-hierarchy approach, based on a succession of simplified models, was used to describe the deposition and the film morphology evolution during the epitaxial silicon carbide deposition in an industrial hot wall reactor. The attention was focused on the system involving chlorinated species because of its superior performances with respect the traditional silane/hydrocarbons process. The evolution of the crystalline structure (i.e., from poly to single) and of the surface roughness can be understood by simply comparing two characteristic times, like those inherent the surface diffusion and the matter supply to the surface. Two other characteristic times were introduced to describe through a kinetic Monte Carlo model the line defects formation.
chemical vapor deposition; multiscale modeling; silicon carbide
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/555293
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