This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.
Design and performance of an InGaAs/InP single-photon avalanche diode detector
COVA, SERGIO;
2006-01-01
Abstract
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
2006_JournalQuantumElectronics_Pellegrini_DesignOfInGaAs.pdf
Accesso riservato
:
Altro materiale allegato
Dimensione
612.02 kB
Formato
Adobe PDF
|
612.02 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
