The use of chlorinated precursors recently emerged as the most promising route in SiC CVD but the chemical mechanisms involved in are still not completely defined. Thus, the homoepitaxial SiC film in horizontal hot wall CVD reactors was here analyzed by considering different processes involving chlorinated species. A general but rather simple deposition mechanism involving the most important chemical species was then developed. Reaction rate constants were estimated through classical kinetic theories while most significant reaction rate constants were refined through quantum mechanical methods. The resulting mechanism was embedded into a simplified reactor model and the simulation results were compared against experimental growth rate data.

Homoepitaxial silicon carbide deposition processes via chlorine routes

FIORUCCI, ALESSANDRO;MOSCATELLI, DAVIDE;MASI, MAURIZIO
2007

Abstract

The use of chlorinated precursors recently emerged as the most promising route in SiC CVD but the chemical mechanisms involved in are still not completely defined. Thus, the homoepitaxial SiC film in horizontal hot wall CVD reactors was here analyzed by considering different processes involving chlorinated species. A general but rather simple deposition mechanism involving the most important chemical species was then developed. Reaction rate constants were estimated through classical kinetic theories while most significant reaction rate constants were refined through quantum mechanical methods. The resulting mechanism was embedded into a simplified reactor model and the simulation results were compared against experimental growth rate data.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/552267
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