it is the object of the present invention to provide a structure which is photosensitive to the colour of a light radiation. According to the invention, said object is achieved by a structure which is photosensitive to the colour of a light radiation, said structure being formed by a semiconductor substrate having a first type of conductivity, said substrate being adapted to generate carriers having a different distribution as the depth varies upon incidence of a light radiation, as a function of the wave length of the light radiation, said structure comprising at least one first and one second element, both arranged in said substrate and adapted to collect the generated carriers, both said first and said second element being adapted to generate at least first and second electrical signals in response to the amount of carriers collected, said structure comprising means adapted to generate an electrical field orthogonal to the upper surface of the substrate, characterised in that it comprises further means adapted to generate an electrical field transversal to the structure and parallel to its upper surface, said means in combination with said further means being adapted to generate a resulting electrical field such as to determine a distribution of trajectories for the carriers within the substrate as a function of the wave length of the incident light radiation, said trajectories being mainly directed towards said first element or towards said second element as a function of the wave length of the incident radiation. L'oggetto del brevetto è un nuovo tipo di senore di colore. Tale sensore è formato da una zona svuotata all'interno di un semiconduttore e da opportune regioni/contatti di polarizzazione e raccolta. Tramite tali regioni/contatti si generano componenti di campo elettrico trasversali all'interno della regione svuotata, in modo che le diverse regioni/contatti raccolgano da profondità diverse i portatori fotogenerati. Sfruttando la dipendenza del coefficiente di assorbimento del materiale usato dalla lunghezza d'onda della radiazione, si ottiene una diversa risposta spettrale per i diversi contatti/regioni. Dal confronto delle diverse risposte il colore può essere ricostruito.
Luminous radiation colour photosensitive structure
LONGONI, ANTONIO FRANCESCO;ZARAGA, FEDERICO;LANGFELDER, GIACOMO
2008-01-01
Abstract
it is the object of the present invention to provide a structure which is photosensitive to the colour of a light radiation. According to the invention, said object is achieved by a structure which is photosensitive to the colour of a light radiation, said structure being formed by a semiconductor substrate having a first type of conductivity, said substrate being adapted to generate carriers having a different distribution as the depth varies upon incidence of a light radiation, as a function of the wave length of the light radiation, said structure comprising at least one first and one second element, both arranged in said substrate and adapted to collect the generated carriers, both said first and said second element being adapted to generate at least first and second electrical signals in response to the amount of carriers collected, said structure comprising means adapted to generate an electrical field orthogonal to the upper surface of the substrate, characterised in that it comprises further means adapted to generate an electrical field transversal to the structure and parallel to its upper surface, said means in combination with said further means being adapted to generate a resulting electrical field such as to determine a distribution of trajectories for the carriers within the substrate as a function of the wave length of the incident light radiation, said trajectories being mainly directed towards said first element or towards said second element as a function of the wave length of the incident radiation. L'oggetto del brevetto è un nuovo tipo di senore di colore. Tale sensore è formato da una zona svuotata all'interno di un semiconduttore e da opportune regioni/contatti di polarizzazione e raccolta. Tramite tali regioni/contatti si generano componenti di campo elettrico trasversali all'interno della regione svuotata, in modo che le diverse regioni/contatti raccolgano da profondità diverse i portatori fotogenerati. Sfruttando la dipendenza del coefficiente di assorbimento del materiale usato dalla lunghezza d'onda della radiazione, si ottiene una diversa risposta spettrale per i diversi contatti/regioni. Dal confronto delle diverse risposte il colore può essere ricostruito.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.