We have investigated self-assembled island formation, molecular detail and interesting contrast reversal effects for Er3N@C80 and Sc3N@C80 on Au(111) and Ag/Si(111) surfaces using variable temperature scanning tunnelling microscopy (STM) and spectroscopy (STS). The trinitride containing fullerenes have been evaporated onto Ag-passivated Si(111) at room temperature and self-assembled into close-packed 2-D islands. Gentle annealing at 200 – 300 °C is required for the formation of close-packed islands with 20 – 50 nm diameter on the Au(111) surface. Variable-voltage STM reveals bias-dependent contrast anomalies within the islands, and at low temperatures (< 90K), intra-molecular resolution of the fullerenes has been achieved. STS measurements indicate that the bright/dark anomalies may be caused by different electron densities of states for the “normal” and “anomalous” fullerenes.

Self-assembly and electronic effects of Er3N@C80 and Sc3N@C80 on Au(111) and Ag/Si(111) surfaces

CATTANEO, DIEGO;LI BASSI, ANDREA;CASARI, CARLO SPARTACO;PASSONI, MATTEO;
2008-01-01

Abstract

We have investigated self-assembled island formation, molecular detail and interesting contrast reversal effects for Er3N@C80 and Sc3N@C80 on Au(111) and Ag/Si(111) surfaces using variable temperature scanning tunnelling microscopy (STM) and spectroscopy (STS). The trinitride containing fullerenes have been evaporated onto Ag-passivated Si(111) at room temperature and self-assembled into close-packed 2-D islands. Gentle annealing at 200 – 300 °C is required for the formation of close-packed islands with 20 – 50 nm diameter on the Au(111) surface. Variable-voltage STM reveals bias-dependent contrast anomalies within the islands, and at low temperatures (< 90K), intra-molecular resolution of the fullerenes has been achieved. STS measurements indicate that the bright/dark anomalies may be caused by different electron densities of states for the “normal” and “anomalous” fullerenes.
2008
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/545438
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