This work aims to study the feasibility of the integration, on the same chip, of GaAs pixel detectors and front-end electronics employing GaAs MESFETs or HEMTs. Interest of a full GaAs integrated systems are in X and γ-ray spectroscopy and imaging for scientific, industrial and medical applications. The current status and recent experimental results regarding radiation detectors on semi-insulating GaAs are presented. Measurements of the relevant parameters of GaAs FETs suitable for stringent requirements of a spectroscopy-graded front-end amplifier are analysed. Some still open problems regarding the detector-electronics integration are highlighted.
GaAs pixel detectors with integrated electronics: experimental basis and feasibility study
BERTUCCIO, GIUSEPPE;PADOVINI, GIORGIO MICHELE
1997-01-01
Abstract
This work aims to study the feasibility of the integration, on the same chip, of GaAs pixel detectors and front-end electronics employing GaAs MESFETs or HEMTs. Interest of a full GaAs integrated systems are in X and γ-ray spectroscopy and imaging for scientific, industrial and medical applications. The current status and recent experimental results regarding radiation detectors on semi-insulating GaAs are presented. Measurements of the relevant parameters of GaAs FETs suitable for stringent requirements of a spectroscopy-graded front-end amplifier are analysed. Some still open problems regarding the detector-electronics integration are highlighted.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
