This work aims to study the feasibility of the integration, on the same chip, of GaAs pixel detectors and front-end electronics employing GaAs MESFETs or HEMTs. Interest of a full GaAs integrated systems are in X and γ-ray spectroscopy and imaging for scientific, industrial and medical applications. The current status and recent experimental results regarding radiation detectors on semi-insulating GaAs are presented. Measurements of the relevant parameters of GaAs FETs suitable for stringent requirements of a spectroscopy-graded front-end amplifier are analysed. Some still open problems regarding the detector-electronics integration are highlighted.

GaAs pixel detectors with integrated electronics: experimental basis and feasibility study

BERTUCCIO, GIUSEPPE;PADOVINI, GIORGIO MICHELE
1997

Abstract

This work aims to study the feasibility of the integration, on the same chip, of GaAs pixel detectors and front-end electronics employing GaAs MESFETs or HEMTs. Interest of a full GaAs integrated systems are in X and γ-ray spectroscopy and imaging for scientific, industrial and medical applications. The current status and recent experimental results regarding radiation detectors on semi-insulating GaAs are presented. Measurements of the relevant parameters of GaAs FETs suitable for stringent requirements of a spectroscopy-graded front-end amplifier are analysed. Some still open problems regarding the detector-electronics integration are highlighted.
Proc. GaAs 97
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/543393
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