We present a compact 50 µm x 100 µm cell for single-photon detection, based on a new circuitry monolithically integrated together with a 20 µm-diameter CMOS Single-Photon Avalanche Diode (SPAD). The detector quenching relies on a novel mechanism based on starving the avalanche current till quenching through a variable-load (VLQC, Variable-Load Quenching Circuit). Fabricated in a standard 0.35 µm CMOS technology, the topology allows a SPAD bias voltage higher than the chip supply voltage to be used. Moreover it preserves the advantages of active quenching circuits, in terms of hold-off capability (from 40 ns to 2 µs) and fast reset (<2 ns), while maintaining the low avalanche charge (<1.6 pC/avalanche) and extremely small dimensions of passive quenching circuits. The cell enables the development of large-dimension dense arrays of SPADs, for two-dimensional imaging at the photon counting level with photon-timing jitter better than 40 ps.

Variable-Load Quenching Circuit for Single-Photon Avalanche Diodes

TISA, SIMONE;GUERRIERI, FABRIZIO;ZAPPA, FRANCO
2008

Abstract

We present a compact 50 µm x 100 µm cell for single-photon detection, based on a new circuitry monolithically integrated together with a 20 µm-diameter CMOS Single-Photon Avalanche Diode (SPAD). The detector quenching relies on a novel mechanism based on starving the avalanche current till quenching through a variable-load (VLQC, Variable-Load Quenching Circuit). Fabricated in a standard 0.35 µm CMOS technology, the topology allows a SPAD bias voltage higher than the chip supply voltage to be used. Moreover it preserves the advantages of active quenching circuits, in terms of hold-off capability (from 40 ns to 2 µs) and fast reset (<2 ns), while maintaining the low avalanche charge (<1.6 pC/avalanche) and extremely small dimensions of passive quenching circuits. The cell enables the development of large-dimension dense arrays of SPADs, for two-dimensional imaging at the photon counting level with photon-timing jitter better than 40 ps.
sezele
File in questo prodotto:
File Dimensione Formato  
05549868.pdf

Accesso riservato

: Post-Print (DRAFT o Author’s Accepted Manuscript-AAM)
Dimensione 3.38 MB
Formato Adobe PDF
3.38 MB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/526935
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 81
  • ???jsp.display-item.citation.isi??? ND
social impact