Emerging phase-change memory (PCM) technology for non-volatile applications presents many potential advantages in terms of scalability, endurance and program/read speed. While several integration issues have still to be solved before achieving volume-production stage, the fundamental physics of chalcogenide switching and phase-change behaviour has still to be comprehensively understood. This paper provides an in-depth analysis of the switching and programming transient in PCM cells. It is shown that the cell parasitic capacitance can lead to a marked current overshoot in the programming transient. As evidenced by experiments, this overshoot is able to melt and quench the active material as in a reset operation. The parasitic reset results in a series distribution of crystalline and amorphous phases after program. The analysis of array cell capacitance instead indicates that no parasitic reset is to be expected, allowing for a localized crystallization during program, as previously obtained by numerical simulations.

Switching and programming dynamics in phase-change memory cells

IELMINI, DANIELE;LACAITA, ANDREA LEONARDO;
2005-01-01

Abstract

Emerging phase-change memory (PCM) technology for non-volatile applications presents many potential advantages in terms of scalability, endurance and program/read speed. While several integration issues have still to be solved before achieving volume-production stage, the fundamental physics of chalcogenide switching and phase-change behaviour has still to be comprehensively understood. This paper provides an in-depth analysis of the switching and programming transient in PCM cells. It is shown that the cell parasitic capacitance can lead to a marked current overshoot in the programming transient. As evidenced by experiments, this overshoot is able to melt and quench the active material as in a reset operation. The parasitic reset results in a series distribution of crystalline and amorphous phases after program. The analysis of array cell capacitance instead indicates that no parasitic reset is to be expected, allowing for a localized crystallization during program, as previously obtained by numerical simulations.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/524608
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