Silicon Drift Detectors (SDDs), thanks to their peculiar low noise characteristics, have proven to be excellent photodetectors for CsI(Tl)scintillation light detection. Two basic detector configurations have been developed: either a single SDD or a monolithic array of SDDscoupled to a single CsI(Tl) crystal. A 16 independent detectorsprototype is under construction, designed to work in conjunction with the MEGA Compton telescope prototype under development at MPE, Garching, Germany. A single SDD coupled to a CsI(Tl) crystal has also been tested as a monolithic detector with an extended energy range between 1.5 keV and 1 MeV. The SDD is used as a direct X-ray detector for low energy photons interacting in silicon and as a scintillation light photodetector for photons interacting in the crystal. The type of interaction is identified by means of pulse shape discrimination technique. Detectors based on an array of SDDs coupled to a singleCsI(Tl) crystal have also been built. The readout of these detectors is based on the Anger camera technique, and submillimeter spatial resolution can be achieved. The two detectors' approaches and their applications will be described

"Silicon drift detectors coupled to CsI(Tl) scintillators for spaceborne gamma-ray detectors"

FIORINI, CARLO ETTORE;LONGONI, ANTONIO FRANCESCO;
2006-01-01

Abstract

Silicon Drift Detectors (SDDs), thanks to their peculiar low noise characteristics, have proven to be excellent photodetectors for CsI(Tl)scintillation light detection. Two basic detector configurations have been developed: either a single SDD or a monolithic array of SDDscoupled to a single CsI(Tl) crystal. A 16 independent detectorsprototype is under construction, designed to work in conjunction with the MEGA Compton telescope prototype under development at MPE, Garching, Germany. A single SDD coupled to a CsI(Tl) crystal has also been tested as a monolithic detector with an extended energy range between 1.5 keV and 1 MeV. The SDD is used as a direct X-ray detector for low energy photons interacting in silicon and as a scintillation light photodetector for photons interacting in the crystal. The type of interaction is identified by means of pulse shape discrimination technique. Detectors based on an array of SDDs coupled to a singleCsI(Tl) crystal have also been built. The readout of these detectors is based on the Anger camera technique, and submillimeter spatial resolution can be achieved. The two detectors' approaches and their applications will be described
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/518283
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