Hole and electron mobilities in CMOS structures are significantly influenced by a mechanical strain state. In the present work a new experimental device has been designed, able to apply a uniaxial in-plane strain along different crystallographic orientations. A hole mobility enhancement of +10% and an electron mobility decrease of -5% have been demonstrated with the application of a 0.05% compressive <110> strain; a hole mobility enhancement of +2% and an electron mobility decrease of -3% have been induced into the material with the application of a 0.05% compressive <100> strain.

Electrical characterization of CMOS transistors subject to externally applied mechanical stress

BOCCIARELLI, MASSIMILIANO
2008

Abstract

Hole and electron mobilities in CMOS structures are significantly influenced by a mechanical strain state. In the present work a new experimental device has been designed, able to apply a uniaxial in-plane strain along different crystallographic orientations. A hole mobility enhancement of +10% and an electron mobility decrease of -5% have been demonstrated with the application of a 0.05% compressive <110> strain; a hole mobility enhancement of +2% and an electron mobility decrease of -3% have been induced into the material with the application of a 0.05% compressive <100> strain.
CMOS transistors; Strained silicon; Electronic transport
File in questo prodotto:
File Dimensione Formato  
Paper-CCB1.pdf

Accesso riservato

: Post-Print (DRAFT o Author’s Accepted Manuscript-AAM)
Dimensione 635.63 kB
Formato Adobe PDF
635.63 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/516050
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 4
social impact