A conductance-switching memory cell based on 3,3��-bis-��3,5-di-tert-butyl-4-methoxyphenyl��- 2,2��-bithiophene, showing long time retention, very high endurance to electrical stress, and operation in ambient air condition, is presented and the switching mechanism is investigated by comparing cells with aluminum and mercury top metal contacts. Write and erase cycles in excess of 200 and long term information retention of both states without refresh in excess of 48 h are demonstrated. The memory cell is also operating in air with only a small increase in threshold voltage values.

Organic memory device based on 3,3'-bis-(3,5-di-tert-butyl-1,4-methoxyphenyl)-2,2'-bithiophene with high endurance and robustness to ambient air operation

CAIRONI, MARIO;NATALI, DARIO ANDREA NICOLA;SAMPIETRO, MARCO;BERTARELLI, CHIARA;BIANCO, ANDREA;CANESI, ELEONORA VALERIA;ZERBI, GIUSEPPE
2006-01-01

Abstract

A conductance-switching memory cell based on 3,3��-bis-��3,5-di-tert-butyl-4-methoxyphenyl��- 2,2��-bithiophene, showing long time retention, very high endurance to electrical stress, and operation in ambient air condition, is presented and the switching mechanism is investigated by comparing cells with aluminum and mercury top metal contacts. Write and erase cycles in excess of 200 and long term information retention of both states without refresh in excess of 48 h are demonstrated. The memory cell is also operating in air with only a small increase in threshold voltage values.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/512547
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