The layout and the performance of the first silicon drift detector with on-chip electronics are presented. The peculiar characteristics of this device are the small detector capacitance and the direct integration of the front-end transistor on the detector chip. High resolution spectroscopy measurements carried out at room temperature are shown. The topology of a novel multianode drift detector suited for high count rate experiments is introduced.

Design and test at room temperature of the first Silicon Drift detector with on-chip electronics.

BERTUCCIO, GIUSEPPE;FIORINI, CARLO ETTORE;GATTI, EMILIO;LONGONI, ANTONIO FRANCESCO;PINOTTI, ERMANNO;SAMPIETRO, MARCO
1994

Abstract

The layout and the performance of the first silicon drift detector with on-chip electronics are presented. The peculiar characteristics of this device are the small detector capacitance and the direct integration of the front-end transistor on the detector chip. High resolution spectroscopy measurements carried out at room temperature are shown. The topology of a novel multianode drift detector suited for high count rate experiments is introduced.
International Electron Devices Meeting
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/502995
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