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EnglishThe layout and the performance of the first silicon drift detector with on-chip electronics are presented. The peculiar characteristics of this device are the small detector capacitance and the direct integration of the front-end transistor on the detector chip. High resolution spectroscopy measurements carried out at room temperature are shown. The topology of a novel multianode drift detector suited for high count rate experiments is introduced.
| Titolo: | Design and test at room temperature of the first Silicon Drift detector with on-chip electronics. | |
| Autori: | ||
| Data di pubblicazione: | 1994 | |
| Abstract: | The layout and the performance of the first silicon drift detector with on-chip electronics are presented. The peculiar characteristics of this device are the small detector capacitance and the direct integration of the front-end transistor on the detector chip. High resolution spectroscopy measurements carried out at room temperature are shown. The topology of a novel multianode drift detector suited for high count rate experiments is introduced. | |
| Handle: | http://hdl.handle.net/11311/502995 | |
| Appare nelle tipologie: | 04.1 Contributo in Atti di convegno |
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