We characterized the emission intensity of n and p MOSFET’s with different channel lengths, as a function of the biasing conditions. We investigated the physics underlying the luminescence, developed an analytical model and elaborated a complementary part for SPICE, in order to simulate in the circuit analysis also the optical pulses emitted from MOSFET’s. By comparing the simulated and measured optical waveforms, it is possible to identify failures and fix errors in schematics and layouts. We carried out measurements on fast ring oscillators, that made possible to evaluated the phase noise and other electrical characteristics.
Wide-Bandwidth Contactless Testing of Signals in ULSI Circuits by means of Ultrafast Photon-Detectors
COVA, SERGIO;ZAPPA, FRANCO
2001-01-01
Abstract
We characterized the emission intensity of n and p MOSFET’s with different channel lengths, as a function of the biasing conditions. We investigated the physics underlying the luminescence, developed an analytical model and elaborated a complementary part for SPICE, in order to simulate in the circuit analysis also the optical pulses emitted from MOSFET’s. By comparing the simulated and measured optical waveforms, it is possible to identify failures and fix errors in schematics and layouts. We carried out measurements on fast ring oscillators, that made possible to evaluated the phase noise and other electrical characteristics.File in questo prodotto:
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