Efficient thermal management is critical in modern high-power electronics, particularly for aerospace applications where compactness and reliability are essential. This work presents a multi-material thermal solution fabricated via Laser Powder Bed Fusion (PBF-LB/M), consisting of a SnAg3 thermal interface material and high-aspect-ratio AlSi10Mg pillar heat sinks directly printed on silicon wafers. Process parameters were optimized to ensure strong metallurgical anchoring while avoiding thermal damage to the brittle substrate. The SnAg3 layer exhibited a β-Sn matrix with finely distributed A g3 S n intermetallics and S i inclusions resulting from controlled substrate remelting. AlSi10Mg pillars with 0.5 mm diameter reached up to 99.4% relative density, showing a fine cellular-dendritic microstructure and no delamination at the Sn-Al interface. Moreover, thermal cycling from -70° C to +130° C confirmed interface stability. This approach demonstrates the feasibility of directly integrating TIM and heat sinks on silicon, paving the way for compact, additively manufactured thermal architectures in advanced electronics.

Laser Powder Bed Fusion of Multi-Material Heat Sink on Silicon Substrate: A Sn-Al Solution for High-Power Electronic Heat Dissipation

Mistrini, Andrea;Casati, Riccardo
2025-01-01

Abstract

Efficient thermal management is critical in modern high-power electronics, particularly for aerospace applications where compactness and reliability are essential. This work presents a multi-material thermal solution fabricated via Laser Powder Bed Fusion (PBF-LB/M), consisting of a SnAg3 thermal interface material and high-aspect-ratio AlSi10Mg pillar heat sinks directly printed on silicon wafers. Process parameters were optimized to ensure strong metallurgical anchoring while avoiding thermal damage to the brittle substrate. The SnAg3 layer exhibited a β-Sn matrix with finely distributed A g3 S n intermetallics and S i inclusions resulting from controlled substrate remelting. AlSi10Mg pillars with 0.5 mm diameter reached up to 99.4% relative density, showing a fine cellular-dendritic microstructure and no delamination at the Sn-Al interface. Moreover, thermal cycling from -70° C to +130° C confirmed interface stability. This approach demonstrates the feasibility of directly integrating TIM and heat sinks on silicon, paving the way for compact, additively manufactured thermal architectures in advanced electronics.
2025
31st International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2025 - Proceedings
9798331594862
Additive Manufacturing; Advanced Electronic Cooling; AlSi10Mg; Heat Sink; High-Power Electronic; PBF-LB/M; SnAg3; Thermal Interface Material;
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1305108
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