Ultrathin NiO films, ranging from 1 to 16 monolayers (ML) in thickness, have been stabilized via reactive molecular beam epitaxy on the (001) surface of a metastable body-centered cubic (BCC) Ni film. Low-energy electron diffraction (LEED) confirms that NiO grows as a crystalline film, exposing the (001) surface. Auger electron spectroscopy (AES) reveals a slight oxygen excess compared to a perfectly stoichiometric NiO film. Scanning tunneling microscopy (STM) shows that at low coverages the film exhibits atomically flat terraces, while at higher coverage a “wedding cake” morphology emerges. Scanning tunneling spectroscopy (STS) reveals a thickness-dependent evolution of the electronic band gap, which increases from 0.8 eV at 3 ML to 3.5 eV at 16 ML. The center of the band gap is approximately 0.2 eV above the Fermi level, indicating that NiO is p-doped.
Stabilization of Epitaxial NiO(001) Ultra-Thin Films on Body-Centered-Cubic Ni(001)-p(1x1)O
Picone, Andrea;Ciccacci, Franco;Duo, Lamberto;Brambilla, Alberto
2025-01-01
Abstract
Ultrathin NiO films, ranging from 1 to 16 monolayers (ML) in thickness, have been stabilized via reactive molecular beam epitaxy on the (001) surface of a metastable body-centered cubic (BCC) Ni film. Low-energy electron diffraction (LEED) confirms that NiO grows as a crystalline film, exposing the (001) surface. Auger electron spectroscopy (AES) reveals a slight oxygen excess compared to a perfectly stoichiometric NiO film. Scanning tunneling microscopy (STM) shows that at low coverages the film exhibits atomically flat terraces, while at higher coverage a “wedding cake” morphology emerges. Scanning tunneling spectroscopy (STS) reveals a thickness-dependent evolution of the electronic band gap, which increases from 0.8 eV at 3 ML to 3.5 eV at 16 ML. The center of the band gap is approximately 0.2 eV above the Fermi level, indicating that NiO is p-doped.| File | Dimensione | Formato | |
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