Electronic device (100), comprising a circuit module (6) and a protection module (50; 51). The circuit module (6) comprises a P-N junction (102) between a reference terminal 5 (GND) and an electrical node (104), and a plurality of metal connection lines (20) coupled to the electrical node (104) and adapted to be charged due to antenna effect. The protection module (50) comprises an HV transistor (112) and a first capacitor (108). The capacitor (108) is connected 10 between the electrical node (104) and the HV transistor (112) and is configured to turn on the HV transistor (112) when the electrical node (104) charges positively due to the antenna effect. The circuit module (6) is thus maintained at a potential that does not damage the electronic device (100).
PROTECTION ELECTRONIC DEVICE FOR THE PREVENTION OF DAMAGES INDUCED BY PLASMA-ASSISTED PROCESSES, AND MANUFACTURING METHOD THEREOF
Militello Simone;
2024-01-01
Abstract
Electronic device (100), comprising a circuit module (6) and a protection module (50; 51). The circuit module (6) comprises a P-N junction (102) between a reference terminal 5 (GND) and an electrical node (104), and a plurality of metal connection lines (20) coupled to the electrical node (104) and adapted to be charged due to antenna effect. The protection module (50) comprises an HV transistor (112) and a first capacitor (108). The capacitor (108) is connected 10 between the electrical node (104) and the HV transistor (112) and is configured to turn on the HV transistor (112) when the electrical node (104) charges positively due to the antenna effect. The circuit module (6) is thus maintained at a potential that does not damage the electronic device (100).| File | Dimensione | Formato | |
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