This study presents a significant advancement in mid-infrared (MIR) photodetection, using a PIN diode incorporated into a graded-index SiGe photonic waveguide operating at room temperature. The photodetector exhibits broadband mid-infrared detection at a bias voltage of −15 V. The internal responsivity of the device is reported as 1 mA/W in the 5–10 µm infrared range.
Integrated-SiGe Waveguide Photodetector in the 5.2–10 µm Wavelength Range Operating at Room Temperature
Calcaterra, Stefano;Isella, Giovanni;Frigerio, Jacopo;
2024-01-01
Abstract
This study presents a significant advancement in mid-infrared (MIR) photodetection, using a PIN diode incorporated into a graded-index SiGe photonic waveguide operating at room temperature. The photodetector exhibits broadband mid-infrared detection at a bias voltage of −15 V. The internal responsivity of the device is reported as 1 mA/W in the 5–10 µm infrared range.File in questo prodotto:
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