The structural and optical properties of p-doped Ge quantum wells separated by SiGe barriers are presented. The composition profile was determined by atom probe tomography and X-ray diffraction measurements. The energy and broadening of the fundamental intersubband transition were studied by Fourier transform infrared spectroscopy which revealed a strong absorption peak around 8.5 μm making this or similar heterostructures suitable for the realization of optoelectronic devices working in the fingerprint region.
Structural and optical characterization of hole-doped Ge/SiGe multiple quantum wells for mid-infrared photonics
Faverzani, Marco;Calcaterra, Stefano;Impelluso, Davide;Giani, Raffaele;Virgilio, Michele;Chrastina, Daniel;Biagioni, Paolo;Frigerio, Jacopo
2024-01-01
Abstract
The structural and optical properties of p-doped Ge quantum wells separated by SiGe barriers are presented. The composition profile was determined by atom probe tomography and X-ray diffraction measurements. The energy and broadening of the fundamental intersubband transition were studied by Fourier transform infrared spectroscopy which revealed a strong absorption peak around 8.5 μm making this or similar heterostructures suitable for the realization of optoelectronic devices working in the fingerprint region.File in questo prodotto:
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