Blade-coating is a roll-to-roll (R2R) compatible processing technique and has the potential to address the industry's needs for scalable manufacturing of future organic electronics. Here we investigate the applicability of blade-coating for the fabrication of organic thin-film transistors (OTFTs) based on best-in-class organic semiconducting blends comprised of the conjugated small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), and the conjugated polymer poly(indacenodithiophene-co-benzothiadiazole) (C16IDT-BT). We show that the operating characteristics of blade-coated transistors consistently outperform devices prepared via spin-coating, showcasing the compatibility of the technique. Introducing the molecular p-dopant C60F48 into the binary C8-BTBT:C16IDT-BT blend formulation, in combination with carefully optimized blade-coating conditions, helps to enhance the performance of the ensuing transistors further resulting in a maximum hole mobility of ≈14 cm2 V-1 s-1, and an all-around improvement of the device operating characteristics. Our results show that p-doped blend OTFTs can be manufactured using industry relevant processing techniques without sacrificing their state-of-the-art performance. This journal is
Impact of p-type doping on charge transport in blade-coated small-molecule:polymer blend transistors
Scaccabarozzi A. D.;
2020-01-01
Abstract
Blade-coating is a roll-to-roll (R2R) compatible processing technique and has the potential to address the industry's needs for scalable manufacturing of future organic electronics. Here we investigate the applicability of blade-coating for the fabrication of organic thin-film transistors (OTFTs) based on best-in-class organic semiconducting blends comprised of the conjugated small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), and the conjugated polymer poly(indacenodithiophene-co-benzothiadiazole) (C16IDT-BT). We show that the operating characteristics of blade-coated transistors consistently outperform devices prepared via spin-coating, showcasing the compatibility of the technique. Introducing the molecular p-dopant C60F48 into the binary C8-BTBT:C16IDT-BT blend formulation, in combination with carefully optimized blade-coating conditions, helps to enhance the performance of the ensuing transistors further resulting in a maximum hole mobility of ≈14 cm2 V-1 s-1, and an all-around improvement of the device operating characteristics. Our results show that p-doped blend OTFTs can be manufactured using industry relevant processing techniques without sacrificing their state-of-the-art performance. This journal isI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.