Full-zone optical spin injection in AlxGa1−xAs alloys

Full-zone optical spin injection in AlxGa1-xAs alloys is investigated by analyzing the degree of circular polarization (DCP) of luminescence in a quantum well architecture. Aluminium content in AlGaAs barrier layers is varied to explore both the direct- and indirect-bandgap regimes. For all the samples, experimental data are compared with a 30-band k.p model addressing the band structure of the alloy and the optical spin injection over the entire Brillouin zone. We observe circularly polarized luminescence arising from the spin generation either around Gamma or the L valley. We interpret the specific shape of the DCP within a framework accounting for smaller electron spin relaxation at the higher k points of the X valley of the AlGaAs barrier layer. Moreover, it is found that the presence of strain plays a vital role in governing the magnitude and shape of the DCP spectra for near band-edge excitation while exciting spin-polarized carriers in the direct-bandgap AlGaAs. We believe that these findings are important for the realization of AlGaAs-based spin-photonic devices aiming at possible applications in quantum technology.