The influence of a KF-treatment of Cu(In,Ga)Se2 absorbers alone, without the influence of an excessive Se atmosphere and Na from the glass substrate has been studied. K-induced surface modifications differed for varying [K]/([In]+[Se]) (KIS) concentration ratios with a low KIS (0.74) absorber having a K-alloyed CIGSe surface growth and a high KIS (2.16) absorber having a mixed K-alloyed CIGSe and K-In-Se containing small spherical islands growth leading to devices with enhanced efficiencies as compared to the untreated absorber, while a medium KIS (1.73) absorber also having a mixed surface species led to a device with a decreased efficiency than the other two KF-treated absorbers.
Investigation of KF-treatment induced surface modifications of Cu(In Ga)Se2 absorbers and their correlation with device performance
Isheta Majumdar;
2017-01-01
Abstract
The influence of a KF-treatment of Cu(In,Ga)Se2 absorbers alone, without the influence of an excessive Se atmosphere and Na from the glass substrate has been studied. K-induced surface modifications differed for varying [K]/([In]+[Se]) (KIS) concentration ratios with a low KIS (0.74) absorber having a K-alloyed CIGSe surface growth and a high KIS (2.16) absorber having a mixed K-alloyed CIGSe and K-In-Se containing small spherical islands growth leading to devices with enhanced efficiencies as compared to the untreated absorber, while a medium KIS (1.73) absorber also having a mixed surface species led to a device with a decreased efficiency than the other two KF-treated absorbers.| File | Dimensione | Formato | |
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