We present a self-consistent model computing the conduction band electron concentration, the electron and lattice temperatures of GaAs film on substrate during the action of femtosecond laser pulse. Upon illumination with a high-power tightly focused laser pulse the transient modulation of GaAs properties can produce a 'transient metallic nanoparticle'.

Transient Nanostructure Formation in GaAs Film Under Femtosecond Laser Action

Crotti G.;Della Valle G.;
2023-01-01

Abstract

We present a self-consistent model computing the conduction band electron concentration, the electron and lattice temperatures of GaAs film on substrate during the action of femtosecond laser pulse. Upon illumination with a high-power tightly focused laser pulse the transient modulation of GaAs properties can produce a 'transient metallic nanoparticle'.
2023
17th International Congress on Artificial Materials for Novel Wave Phenomena, Metamaterials 2023
9798350332445
Hot carriers
Nonlinear optics
Plasmonics
Ultrafast photonics
Semiconductor photonics
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1264917
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