Characterization of Radiation Hardness of Organic Transistors for a Flexible X-Ray Imager

We present the characterization of complementary p-type and n-type organic transistors in terms of X-ray radiation hardness. These transistors are fabricated as the backplane of an array of photo-conductive pixels based on perovskites for direct X-ray imaging on flexible substrates. Experimental results show that irradiation up to 1 kGy produces negligible effects (a tolerable maximum shift of the transistor threshold voltage of about 40% right after exposure, which is almost completely recovered after 24 hours at rest).