This work reports an experimental investigation of Large Scale Excitation (LSE) in sensing applications. This technique aims at mitigating flicker noise by suppressing its originating, signal-dependent, phenomena. Differently from modulation/chopping, which is not effective in these situations (flicker noise is modulated just as the signal is), LSE aims at switching on/off the source of signal generation without leaving enough time for carrier trapping or mobility changing, so blocking random telegraph noise phenomena which build up 1/f noise. As 1/f noise appears both in transistors and thin-film resistors, which are both key elements in the front-end of various sensors types, this work, after providing a simplified model for the scenario, experimentally verifies LSE. Results confirm the possibility of consistent flicker noise reduction in MOS transistors, by as much as a factor 3.3, whereas no flicker noise reduction is observed on piezoresistors, hinting that the source of 1/f is here a different process.

Can LSE Reduce Noise in Sensing Applications?

Fagnani A.;Frigerio P.;Langfelder G.
2023-01-01

Abstract

This work reports an experimental investigation of Large Scale Excitation (LSE) in sensing applications. This technique aims at mitigating flicker noise by suppressing its originating, signal-dependent, phenomena. Differently from modulation/chopping, which is not effective in these situations (flicker noise is modulated just as the signal is), LSE aims at switching on/off the source of signal generation without leaving enough time for carrier trapping or mobility changing, so blocking random telegraph noise phenomena which build up 1/f noise. As 1/f noise appears both in transistors and thin-film resistors, which are both key elements in the front-end of various sensors types, this work, after providing a simplified model for the scenario, experimentally verifies LSE. Results confirm the possibility of consistent flicker noise reduction in MOS transistors, by as much as a factor 3.3, whereas no flicker noise reduction is observed on piezoresistors, hinting that the source of 1/f is here a different process.
2023
Proceedings of IEEE Sensors
979-8-3503-0387-2
1/f noise
LSE
MEMS
MOSFET
PZR
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1260015
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