Microscopic investigation of intrinsic defects in CVD grown MoS2monolayers

Defects in two-dimensional (2D) transition metal dichalcogenides (TMDs) greatly influence their electronic and optical properties by introducing localized in-gap states. Using different non-invasive techniques, we have investigated the spatial distribution of intrinsic defects in as-grown chemical vapor deposition (CVD) MoS2 monolayers and correlated the results with the growth temperature of the sample. We have shown that by increasing the CVD growth temperature the concentration of defects decreases and their spatial distribution and type change, influencing the sample's electronic and optical properties.