We report on the formation of gas bubbles during the release of MEMS devices using buffered oxide etch. Several approaches to mitigate the problem are proposed and tested together with a qualitative study of the phenomenon. The chemical reaction behind such phenomenon and the influence of defects and topography is discussed. Finally, a comparison with the HF-vapor release technique is shown.
Vapor etching to avoid micro-masking by gas-bubbles in wet release of MEMS
Plaza, A;Maspero, F;Cuccurullo, S;Pavese, G;Bertacco, R
2023-01-01
Abstract
We report on the formation of gas bubbles during the release of MEMS devices using buffered oxide etch. Several approaches to mitigate the problem are proposed and tested together with a qualitative study of the phenomenon. The chemical reaction behind such phenomenon and the influence of defects and topography is discussed. Finally, a comparison with the HF-vapor release technique is shown.File in questo prodotto:
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