Performance optimization of InGaAs/InP SPADs for either low noise or high photon detection efficiency applications

InGaAs/InP Single-Photon Avalanche Diodes ( SPADs) can achieve high photon detection efficiency (PDE) with a thick absorber, but at the expense of higher dark count rate ( DCR). PDE and DCR also depend on the electric field inside the structure, which can be tailored in the design phase and influences the overall performance. We present the design and the experimental characterization of two different 10 mu m-diameter InGaAs/InP SPADs. The first one is intended for applications where low noise is the key requirement: at 225 K and 5 V excess bias, it features 1 kcps DCR, 25% PDE at 1550 nm and a timing jitter of 100 ps (FWHM). The second device is an InGaAs/InP SPAD optimized for PDE-enhanced applications, having a PDE up to 50% at 1550 nm, with a DCR of 20 kcps and a timing jitter of 70 ps (FWHM) at 225 K. Alternatively, it features a PDE of 37% at 1550 nm, with a DCR of just 3 kcps and a timing jitter of 100 ps (FWHM). When combined with a custom integrated circuit we developed, both devices show an afterpulsing probability as low as few percent with a gating frequency of 1 MHz and hold-off time of few microseconds at 225 K, allowing to achieve a photon count rate towards 1 Mcps.