Visible-light integrated photonics is emerging as a promising technology for the realization of optical devices for applications in sensing, quantum information and communications, imaging, and displays. Among the existing photonic platforms, high-index-contrast silicon nitride (Si3N4) waveguides offer broadband transparency in the visible spectral range and a high scale of integration. As the complexity of photonic integrated circuits (PICs) increases, on-chip detectors are required to monitor their working point for reconfiguration and stabilization operations. In this Letter, we present a semi-transparent in-line power monitor integrated on Si3N4 waveguides that operates in the red-light wavelength range (660 nm). The proposed device exploits the photoconductivity of a hydrogenated amorphous-silicon (a-Si:H) film that is evanescently coupled to an optical waveguide. Experimental results show a responsivity of 30 mA/W, a sensitivity of -45 dBm, and a sub-mu s time response. These features enable the use of the proposed photoconductor for high-sensitivity monitoring and control of visible-light Si3N4 PICs. (C) 2022 Optica Publishing Group

Amorphous-silicon visible-light detector integrated on silicon nitride waveguides

De Vita, Christian;Toso, Fabio;Ferrari, Giorgio;Melloni, Andrea;Morichetti, Francesco
2022-01-01

Abstract

Visible-light integrated photonics is emerging as a promising technology for the realization of optical devices for applications in sensing, quantum information and communications, imaging, and displays. Among the existing photonic platforms, high-index-contrast silicon nitride (Si3N4) waveguides offer broadband transparency in the visible spectral range and a high scale of integration. As the complexity of photonic integrated circuits (PICs) increases, on-chip detectors are required to monitor their working point for reconfiguration and stabilization operations. In this Letter, we present a semi-transparent in-line power monitor integrated on Si3N4 waveguides that operates in the red-light wavelength range (660 nm). The proposed device exploits the photoconductivity of a hydrogenated amorphous-silicon (a-Si:H) film that is evanescently coupled to an optical waveguide. Experimental results show a responsivity of 30 mA/W, a sensitivity of -45 dBm, and a sub-mu s time response. These features enable the use of the proposed photoconductor for high-sensitivity monitoring and control of visible-light Si3N4 PICs. (C) 2022 Optica Publishing Group
2022
File in questo prodotto:
File Dimensione Formato  
ViewAcceptedManuscript.pdf

Open Access dal 16/05/2023

: Post-Print (DRAFT o Author’s Accepted Manuscript-AAM)
Dimensione 2.04 MB
Formato Adobe PDF
2.04 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1227481
Citazioni
  • ???jsp.display-item.citation.pmc??? 2
  • Scopus 7
  • ???jsp.display-item.citation.isi??? 7
social impact