The fine-tuning of the growth conditions and post-deposition treatments is of fundamental importance to improve the efficiency of photovoltaic devices based on all-inorganic metal halide perovskites like CsPbBr3. In this work, we used time-resolved terahertz spectroscopy (TRTS) in combination with optical characterization techniques, x-ray diffraction (XRD), and scanning electron microscopy, to probe the different properties induced by a low-temperature (180 degrees C) annealing treatment on evaporated CsPbBr3 thin-films. We observed a faster build-up and relaxation dynamics in the annealed sample, accompanied by a remarkable decrease of the photoluminescence intensity and minor changes in the photoconductivity and XRD measurements as compared to the as-deposited sample. We estimated for both the samples a mobility of mu = (1.7 +/- 0.5) x 10(2) cm(2) V-1 s(-1). Our results suggest that the lattice reorganization induced by low-temperature annealing of evaporated CsPbBr3 could lead to a different charge carrier-phonon coupling and to an increased contribution of non-radiative recombination channels. We found that TRTS can be effectively used to follow the changes induced by post-deposition thermal annealing of CsPbBr3.

Time-resolved terahertz spectroscopy for probing the effects of low-temperature annealing on CsPbBr3evaporated thin-films

Gatto L.;Treglia A.;Crippa G.;Devetta M.;Petrozza A.;Stagira S.;Vozzi C.;Cinquanta E.
2022-01-01

Abstract

The fine-tuning of the growth conditions and post-deposition treatments is of fundamental importance to improve the efficiency of photovoltaic devices based on all-inorganic metal halide perovskites like CsPbBr3. In this work, we used time-resolved terahertz spectroscopy (TRTS) in combination with optical characterization techniques, x-ray diffraction (XRD), and scanning electron microscopy, to probe the different properties induced by a low-temperature (180 degrees C) annealing treatment on evaporated CsPbBr3 thin-films. We observed a faster build-up and relaxation dynamics in the annealed sample, accompanied by a remarkable decrease of the photoluminescence intensity and minor changes in the photoconductivity and XRD measurements as compared to the as-deposited sample. We estimated for both the samples a mobility of mu = (1.7 +/- 0.5) x 10(2) cm(2) V-1 s(-1). Our results suggest that the lattice reorganization induced by low-temperature annealing of evaporated CsPbBr3 could lead to a different charge carrier-phonon coupling and to an increased contribution of non-radiative recombination channels. We found that TRTS can be effectively used to follow the changes induced by post-deposition thermal annealing of CsPbBr3.
2022
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1224060
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