The open-loop transfer function provides valuable insights into the key dynamic characteristics of DC/DC voltage regulators, such as stability, line and load transient response. Nonetheless, the experimental measurement of the loop gain in a monolithically integrated regulator is not straightforward or not even possible by using standard techniques, especially when complex control strategies are adopted. To overcome this issue, we propose an integrated loop-gain measurement circuit specifically designed for DC/DC converters with time-based control. The measurement circuit includes a transconductor, two delay lines, and a simple logic that can be easily integrated in a small silicon area. Moreover, the circuit can be easily disabled during normal operation to minimize its impact on the regulator performance. The proposed circuit was fabricated in a 180nm CMOS technology, occupying a silicon area of 0.027mm(2). Experimental validation was performed by embedding the circuit into a boost converter with time-based control.

Integrated Loop-Gain Measurement Circuit for DC/DC Boost Converters with Time-Based Control

Leoncini, Mauro;Melillo, Paolo;Levantino, Salvatore;Ghioni, Massimo
2022-01-01

Abstract

The open-loop transfer function provides valuable insights into the key dynamic characteristics of DC/DC voltage regulators, such as stability, line and load transient response. Nonetheless, the experimental measurement of the loop gain in a monolithically integrated regulator is not straightforward or not even possible by using standard techniques, especially when complex control strategies are adopted. To overcome this issue, we propose an integrated loop-gain measurement circuit specifically designed for DC/DC converters with time-based control. The measurement circuit includes a transconductor, two delay lines, and a simple logic that can be easily integrated in a small silicon area. Moreover, the circuit can be easily disabled during normal operation to minimize its impact on the regulator performance. The proposed circuit was fabricated in a 180nm CMOS technology, occupying a silicon area of 0.027mm(2). Experimental validation was performed by embedding the circuit into a boost converter with time-based control.
2022
2022 17th Conference on Ph.D Research in Microelectronics and Electronics, Proceedings
978-1-6654-6700-1
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1218649
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