We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two photodiodes connected in a back-to-back configuration. The device responsivity can be tuned, with an external bias, to cover wavelengths within the visible and near-infrared spectral regions.
Ge/Si electrically tunable VIS/SWIR photodetector
Ballabio A.;Frigerio J.;Isella G.;
2021-01-01
Abstract
We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two photodiodes connected in a back-to-back configuration. The device responsivity can be tuned, with an external bias, to cover wavelengths within the visible and near-infrared spectral regions.File in questo prodotto:
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Ge_Si_electrically_tunable_VIS_SWIR_photodetector.pdf
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