We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two photodiodes connected in a back-to-back configuration. The device responsivity can be tuned, with an external bias, to cover wavelengths within the visible and near-infrared spectral regions.

Ge/Si electrically tunable VIS/SWIR photodetector

Ballabio A.;Frigerio J.;Isella G.;
2021

Abstract

We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two photodiodes connected in a back-to-back configuration. The device responsivity can be tuned, with an external bias, to cover wavelengths within the visible and near-infrared spectral regions.
IEEE International Conference on Group IV Photonics GFP
978-1-6654-2224-6
dual band
Ge epitaxy
Ge-on-Si photodetectors
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1208877
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