We present an InGaAs/InP single-photon avalanche diode (SPAD) with 10 mu{m}-diameter active area, designed for fiber-based quantum applications. Improved design and fabrication lead to low dark count rate (1000 cps at 225 K), 25% photon detection efficiency and 100 ps (FWHM) timing jitter.
Low noise InGaAs/InP SPAD for fiber-based quantum applications
Signorelli F.;Telesca F.;Tosi A.
2021-01-01
Abstract
We present an InGaAs/InP single-photon avalanche diode (SPAD) with 10 mu{m}-diameter active area, designed for fiber-based quantum applications. Improved design and fabrication lead to low dark count rate (1000 cps at 225 K), 25% photon detection efficiency and 100 ps (FWHM) timing jitter.File in questo prodotto:
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2021 - Signorelli - Low_noise_InGaAs_InP_SPAD_for_fiber-based_quantum_applications.pdf
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2021 - Signorelli - Low_noise_InGaAs_InP_SPAD_for_fiber-based_quantum_applications - post-print.pdf
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