We present a comprehensive model to estimate photon detection efficiency (PDE) of InGaAs/InP single photon avalanche diodes (SPADs) through bidimensional simulations, including the temperature dependence of both optical and electrical properties, aimed at assisting the design of enhanced-PDE detectors.
Temperature-dependent Photon Detection Efficiency model for InGaAs/InP SPAD
Telesca F.;Signorelli F.;Tosi A.
2021-01-01
Abstract
We present a comprehensive model to estimate photon detection efficiency (PDE) of InGaAs/InP single photon avalanche diodes (SPADs) through bidimensional simulations, including the temperature dependence of both optical and electrical properties, aimed at assisting the design of enhanced-PDE detectors.File in questo prodotto:
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2021 - Telesca - Temperature-dependent_Photon_Detection_Efficiency_model_for_InGaAs_InP_SPAD.pdf
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