An antireflection coating (ARC) for silicon devices operating at 10 μm has been designed, fabricated and validated. The ARC is based on ZnS and Al2O3 and is deposited at room temperature. Both single and double side ARCs are considered, demonstrating a transmission enhancement respectively of 66% and 89% with respect to an uncoated silicon device.

ZnS antireflection coating for Silicon for MIR - LWIR applications

De Vita C.;Asa M.;Somaschini C.;Morichetti F.;Melloni A.
2021

Abstract

An antireflection coating (ARC) for silicon devices operating at 10 μm has been designed, fabricated and validated. The ARC is based on ZnS and Al2O3 and is deposited at room temperature. Both single and double side ARCs are considered, demonstrating a transmission enhancement respectively of 66% and 89% with respect to an uncoated silicon device.
IEEE International Conference on Group IV Photonics GFP
978-1-6654-2224-6
antireflection
infrared
Silicon
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1201390
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