An antireflection coating (ARC) for silicon devices operating at 10 μm has been designed, fabricated and validated. The ARC is based on ZnS and Al2O3 and is deposited at room temperature. Both single and double side ARCs are considered, demonstrating a transmission enhancement respectively of 66% and 89% with respect to an uncoated silicon device.
ZnS antireflection coating for Silicon for MIR - LWIR applications
De Vita C.;Asa M.;Somaschini C.;Morichetti F.;Melloni A.
2021-01-01
Abstract
An antireflection coating (ARC) for silicon devices operating at 10 μm has been designed, fabricated and validated. The ARC is based on ZnS and Al2O3 and is deposited at room temperature. Both single and double side ARCs are considered, demonstrating a transmission enhancement respectively of 66% and 89% with respect to an uncoated silicon device.File in questo prodotto:
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ARC_GFP2021.pdf
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