We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below TCDW=263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to- semiconductor transition observed in transport at TCDW. © 2013 American Physical Society.
Electronic instability in a zero-gap semiconductor: The charge-density wave in (TaSe4)2I
Crepaldi A.;
2013-01-01
Abstract
We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below TCDW=263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to- semiconductor transition observed in transport at TCDW. © 2013 American Physical Society.File | Dimensione | Formato | |
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Tournier_Crepaldi_PhysRevLett.110.236401_Electron instability in a zero gap semiconductor the CDW in TaSe4_2I2.pdf
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