Floating-gate transistor at cryogenic temperature: Characterization and modelling of tunnelling and hot electrons injection

We demonstrate the cryogenic operation of a floating-gate device fabricated using an inexpensive commercial CMOS process. Device architecture and basic characteristics at 15K and at room temperature are presented. A fine tuning of the stored charge is obtained by combining channel hot electron injection and Fowler-Nordheim tunneling. This programmability is compatible with an operation of the proposed floating-gate as long-term accurate analog memory, as required by cryogenic neuromorphic systems or precise analog circuits operating at few Kelvin.