ALTAIR is an Application Specific Integrated Circuit (ASIC) developed for the readout of CdTe/CdZnTe detectors for X-γ ray spectroscopic imaging. ALTAIR is composed of 16 channels with analog and mixed-signal sections specifically designed for high energy resolution and high-rate applications with the constraints of a low power consumption and operation at room temperature. The ASIC has three selectable ranges for input charge signals covering photon energies up to 90 keV, 160 keV or 300 keV, which allow to optimize the signal to noise ratio under different experimental conditions. Eight peaking times of the pulse shaper are selectable from 200 ns up to 2.3 μs. ALTAIR includes a 180 bits register and an integrated SPI interface to configure the signal processing parameters globally or independently for each channel. The power consumption is 950 μW/channel or 1.35 mW/channel for single ended or differential output versions, respectively. A minimum Equivalent Noise Charge (ENC) of 37 electrons rms (386 eV FWHM in CdTe) has been measured at 500 ns peaking time and 90 keV energy range. With a CdTe pixel detector connected to ALTAIR and operated at +24°C, a pulser FWHM of 1.7 keV (160 el. rms) and 1.9 keV FWHM on 59.54 keV line of 241Am have been achieved at a peaking time of 500 ns.

ALTAIR: A Low-Noise, Low-Power High Speed and Wide Dynamic Range ASIC for X and γ Ray Spectroscopy with CdTe/CdZnTe Pixel Detectors

Gandola M.;Bertuccio G.
2021-01-01

Abstract

ALTAIR is an Application Specific Integrated Circuit (ASIC) developed for the readout of CdTe/CdZnTe detectors for X-γ ray spectroscopic imaging. ALTAIR is composed of 16 channels with analog and mixed-signal sections specifically designed for high energy resolution and high-rate applications with the constraints of a low power consumption and operation at room temperature. The ASIC has three selectable ranges for input charge signals covering photon energies up to 90 keV, 160 keV or 300 keV, which allow to optimize the signal to noise ratio under different experimental conditions. Eight peaking times of the pulse shaper are selectable from 200 ns up to 2.3 μs. ALTAIR includes a 180 bits register and an integrated SPI interface to configure the signal processing parameters globally or independently for each channel. The power consumption is 950 μW/channel or 1.35 mW/channel for single ended or differential output versions, respectively. A minimum Equivalent Noise Charge (ENC) of 37 electrons rms (386 eV FWHM in CdTe) has been measured at 500 ns peaking time and 90 keV energy range. With a CdTe pixel detector connected to ALTAIR and operated at +24°C, a pulser FWHM of 1.7 keV (160 el. rms) and 1.9 keV FWHM on 59.54 keV line of 241Am have been achieved at a peaking time of 500 ns.
2021
Cadmium compounds
Detectors
II-VI semiconductor materials
Preamplifiers
Application Specific Integrated Circuits (ASICs)
CdTe
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1158871
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