We present a comprehensive simulation flow for the estimation of photon detection efficiency as a function of wavelength in InGaAs/InP single-photon avalanche diodes (SPADs) at low temperature. We introduce a joint modelling of electrical and optical properties for SPAD detectors. We also highlight how accurately different parameters have to be calibrated in order to achieve good matching between simulations and measurements.
Photon Detection Efficiency simulation of InGaAs/InP SPAD
Signorelli F.;Telesca F.;Tosi A.
2020-01-01
Abstract
We present a comprehensive simulation flow for the estimation of photon detection efficiency as a function of wavelength in InGaAs/InP single-photon avalanche diodes (SPADs) at low temperature. We introduce a joint modelling of electrical and optical properties for SPAD detectors. We also highlight how accurately different parameters have to be calibrated in order to achieve good matching between simulations and measurements.File in questo prodotto:
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2020 - Signorelli - PDE simulation of InGaAs-InP SPAD.pdf
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