We present a comprehensive simulation flow for the estimation of photon detection efficiency as a function of wavelength in InGaAs/InP single-photon avalanche diodes (SPADs) at low temperature. We introduce a joint modelling of electrical and optical properties for SPAD detectors. We also highlight how accurately different parameters have to be calibrated in order to achieve good matching between simulations and measurements.

Photon Detection Efficiency simulation of InGaAs/InP SPAD

Signorelli F.;Telesca F.;Tosi A.
2020-01-01

Abstract

We present a comprehensive simulation flow for the estimation of photon detection efficiency as a function of wavelength in InGaAs/InP single-photon avalanche diodes (SPADs) at low temperature. We introduce a joint modelling of electrical and optical properties for SPAD detectors. We also highlight how accurately different parameters have to be calibrated in order to achieve good matching between simulations and measurements.
2020
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
978-1-7281-6086-3
InGaAs/InP
near-infrared detector
photon detection efficiency
quantum efficiency
Single-photon avalanche diode (SPAD)
single-photon detector
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1156986
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