Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent a powerful tool to investigate spin transport in metals, semiconductors and metal/semiconductor heterostructures. The possibility to convert a spin current into a charge current (and vice versa) allows for the design of efficient spin injection/detection schemes, even without the use of ferromagnets, to unravel fundamental spin transport properties. The article reviews the recent advances in the investigation of the spin-charge interconversion phenomena in platforms based on group-IV semiconductors. Convenient experimental architectures to inject and detect spin currents in Ge and Si are discussed, as well as diffusion models for spin transport in these semiconductors.

Spin-charge interconversion in heterostructures based on group-IV semiconductors

Bottegoni F.;Zucchetti C.;Isella G.;Bollani M.;Finazzi M.;Ciccacci F.
2020-01-01

Abstract

Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent a powerful tool to investigate spin transport in metals, semiconductors and metal/semiconductor heterostructures. The possibility to convert a spin current into a charge current (and vice versa) allows for the design of efficient spin injection/detection schemes, even without the use of ferromagnets, to unravel fundamental spin transport properties. The article reviews the recent advances in the investigation of the spin-charge interconversion phenomena in platforms based on group-IV semiconductors. Convenient experimental architectures to inject and detect spin currents in Ge and Si are discussed, as well as diffusion models for spin transport in these semiconductors.
2020
Optical spin injection; Spin diffusion; Spin transport; Spintronics in group-IV semiconductors
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1133071
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