Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent a powerful tool to investigate spin transport in metals, semiconductors and metal/semiconductor heterostructures. The possibility to convert a spin current into a charge current (and vice versa) allows for the design of efficient spin injection/detection schemes, even without the use of ferromagnets, to unravel fundamental spin transport properties. The article reviews the recent advances in the investigation of the spin-charge interconversion phenomena in platforms based on group-IV semiconductors. Convenient experimental architectures to inject and detect spin currents in Ge and Si are discussed, as well as diffusion models for spin transport in these semiconductors.
Spin-charge interconversion in heterostructures based on group-IV semiconductors
Bottegoni F.;Zucchetti C.;Isella G.;Bollani M.;Finazzi M.;Ciccacci F.
2020-01-01
Abstract
Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent a powerful tool to investigate spin transport in metals, semiconductors and metal/semiconductor heterostructures. The possibility to convert a spin current into a charge current (and vice versa) allows for the design of efficient spin injection/detection schemes, even without the use of ferromagnets, to unravel fundamental spin transport properties. The article reviews the recent advances in the investigation of the spin-charge interconversion phenomena in platforms based on group-IV semiconductors. Convenient experimental architectures to inject and detect spin currents in Ge and Si are discussed, as well as diffusion models for spin transport in these semiconductors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
