This work presents an optimized model for resistance evolution in PCM cells with Ge-rich GeSbTe (GST) alloy as active material. Unlike conventional Ge2Sb2 Te5, the low-resistance (set) state of Ge-rich GST shows a resistance drift to high resistance R, similar to the high resistance (reset) state, which could be a potential risk for data reliability. We develop a Monte Carlo (MC) model which predicts the time evolution of R at the statistical level of a memory array at various temperature T. The model is validated against variable temperature annealing, such as the soldering profile in embedded PCM, supporting the good reliability of Ge-rich GST at high T.

Monte Carlo model of resistance evolution in embedded PCM with Ge-rich GST

Melnic O.;Borghi M.;Ielmini D.
2019-01-01

Abstract

This work presents an optimized model for resistance evolution in PCM cells with Ge-rich GeSbTe (GST) alloy as active material. Unlike conventional Ge2Sb2 Te5, the low-resistance (set) state of Ge-rich GST shows a resistance drift to high resistance R, similar to the high resistance (reset) state, which could be a potential risk for data reliability. We develop a Monte Carlo (MC) model which predicts the time evolution of R at the statistical level of a memory array at various temperature T. The model is validated against variable temperature annealing, such as the soldering profile in embedded PCM, supporting the good reliability of Ge-rich GST at high T.
2019
Digest of Technical Papers - Symposium on VLSI Technology
978-4-86348-719-2
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1127735
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