Ruthenium is electrodeposited for the first time from a deep eutectic solvent based electrolyte composed of ethylene glycol and choline chloride in 1:2 molar ratio. Deposition is found to effectively occur upon addition of sulfamic acid to the Ru(III) containing deep eutectic solvent. The main consequence of the presence of sulfamic acid, as evidenced by the electrochemical characterization performed, is the oxidation of Ru(III) to Ru(IV). Consequently, Ru electroreduction is demonstrated to take place from the tetravalent state. Optimized plating conditions are able to yield uniform and crack-free Ru coatings up to 800 nm thickness. No oxides or other notable secondary phases can be individuated in the obtained metallic layers. Morphological and electrical properties of the layers obtained are comparable with Ru coatings deposited from sputtering and suggest possible applications in the electronics field as barrier layers for interdiffusion.

Ruthenium Electrodeposition from Deep Eutectic Solvents

R. Bernasconi;A. Lucotti;L. Nobili;L. Magagnin
2018-01-01

Abstract

Ruthenium is electrodeposited for the first time from a deep eutectic solvent based electrolyte composed of ethylene glycol and choline chloride in 1:2 molar ratio. Deposition is found to effectively occur upon addition of sulfamic acid to the Ru(III) containing deep eutectic solvent. The main consequence of the presence of sulfamic acid, as evidenced by the electrochemical characterization performed, is the oxidation of Ru(III) to Ru(IV). Consequently, Ru electroreduction is demonstrated to take place from the tetravalent state. Optimized plating conditions are able to yield uniform and crack-free Ru coatings up to 800 nm thickness. No oxides or other notable secondary phases can be individuated in the obtained metallic layers. Morphological and electrical properties of the layers obtained are comparable with Ru coatings deposited from sputtering and suggest possible applications in the electronics field as barrier layers for interdiffusion.
Electrodeposition, interconnects, microelectronics
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1077253
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