We report on the first third order nonlinear experimental characterization of Ge-rich Si1.xGexwaveguides, with Germanium concentrations x ranging from 0.7 to 0.9. The experimental values will be compared with theoretical models. These results will provide helpful insights to assist the design of nonlinear integrated optical based devices in both the near- and mid-IR wavelength ranges.

Third order nonlinear optical properties of Ge-Rich SiGe waveguides

Frigerio, Jacopo;Ballabio, Andrea;Isella, Giovanni;
2017-01-01

Abstract

We report on the first third order nonlinear experimental characterization of Ge-rich Si1.xGexwaveguides, with Germanium concentrations x ranging from 0.7 to 0.9. The experimental values will be compared with theoretical models. These results will provide helpful insights to assist the design of nonlinear integrated optical based devices in both the near- and mid-IR wavelength ranges.
2017
14th International Conference on Group IV Photonics, GFP 2017
9781509065684
Bandgap engineering; Germanium; Integrated photonics; Nonlinear optics; Silicon; Computer Networks and Communications; Instrumentation; Atomic and Molecular Physics, and Optics
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1063057
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