he third-order nonlinear parameter of Ge-rich SiGe waveguides are experimentally retrieved using a bi-directional top hat D-scan at λ = 1.58 μm. The obtained values are then used to fit the theoretical equation, providing promising values in the mid-IR, where the nonlinear effects are no longer limited by two-photon absorption. New Ge-rich SiGe waveguide designs are provided to exploit the nonlinear properties in the mid-IR, showing a flat anomalous dispersion over one octave spanning from λ = 3 µm to λ = 8 μm and a γ parameter that decreases from γ = 10 W-1m-1 .
Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR
Isella, Giovanni;Ballabio, Andrea;Frigerio, Jacopo;
2018-01-01
Abstract
he third-order nonlinear parameter of Ge-rich SiGe waveguides are experimentally retrieved using a bi-directional top hat D-scan at λ = 1.58 μm. The obtained values are then used to fit the theoretical equation, providing promising values in the mid-IR, where the nonlinear effects are no longer limited by two-photon absorption. New Ge-rich SiGe waveguide designs are provided to exploit the nonlinear properties in the mid-IR, showing a flat anomalous dispersion over one octave spanning from λ = 3 µm to λ = 8 μm and a γ parameter that decreases from γ = 10 W-1m-1 .File in questo prodotto:
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