Al-doped polycrystalline nano ZnO (Al-ZnO) thin films with different doping concentrations were successfully prepared by the microwave-assisted successive ionic layer adsorption and reaction (mSILAR) technique. The structural analysis along with the orientation of the prepared films was examined by powder x-ray diffraction (PXRD) patterns. The deposited film is polycrystalline and the (002) orientation enhanced upon doping. Additional investigations were carried out to study the effect of electron beam irradiation (e−-irradiation) on the band gap and photoconductivity of both irradiated and unirradiated samples. Both the Al doping and e−-irradiation led to the enhancement of the photoconductivity of prepared materials. This property enables us to tune the properties of materials for various applications by controlling dopant concentrations and e−-irradiation. The dependence of photocurrent on e−-irradiation of Al-ZnO thin films was not reported previously. Therefore, Al-doped polycrystalline nano-ZnO thin film is a promising material for band gap engineering and for the development of solar cells.

Microtron Irradiation Induced Tuning of Band Gap and Photoresponse of Al-ZnO Thin Films Synthesized by mSILAR

Alhaddad, Ahmad Yaser;
2016-01-01

Abstract

Al-doped polycrystalline nano ZnO (Al-ZnO) thin films with different doping concentrations were successfully prepared by the microwave-assisted successive ionic layer adsorption and reaction (mSILAR) technique. The structural analysis along with the orientation of the prepared films was examined by powder x-ray diffraction (PXRD) patterns. The deposited film is polycrystalline and the (002) orientation enhanced upon doping. Additional investigations were carried out to study the effect of electron beam irradiation (e−-irradiation) on the band gap and photoconductivity of both irradiated and unirradiated samples. Both the Al doping and e−-irradiation led to the enhancement of the photoconductivity of prepared materials. This property enables us to tune the properties of materials for various applications by controlling dopant concentrations and e−-irradiation. The dependence of photocurrent on e−-irradiation of Al-ZnO thin films was not reported previously. Therefore, Al-doped polycrystalline nano-ZnO thin film is a promising material for band gap engineering and for the development of solar cells.
2016
band gap; doping; mSILAR; photoconductivity; solar cell; Electronic, Optical and Magnetic Materials; Condensed Matter Physics; Electrical and Electronic Engineering; Materials Chemistry2506 Metals and Alloys
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1061667
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