The optoelectronic properties of a material are determined by the processes following light-matter interaction. Here we use femtosecond optical spectroscopy to systematically study photoexcited carrier relaxation in few-layer MoS2flakes as a function of excitation density and sample thickness. We find bimolecular coalescence of charges into indirect excitons as the dominant relaxation process in two- to three-layer flakes while thicker flakes show a much higher density of defects, which efficiently trap charges before they can coalesce.

Charge trapping and coalescence dynamics in few layer MoS2

BORZDA, TETIANA;Cerullo, Giulio;Gadermaier, Christoph
2018-01-01

Abstract

The optoelectronic properties of a material are determined by the processes following light-matter interaction. Here we use femtosecond optical spectroscopy to systematically study photoexcited carrier relaxation in few-layer MoS2flakes as a function of excitation density and sample thickness. We find bimolecular coalescence of charges into indirect excitons as the dominant relaxation process in two- to three-layer flakes while thicker flakes show a much higher density of defects, which efficiently trap charges before they can coalesce.
2018
defects; femtosecond dynamics; liquid phase exfoliation; molybdenum disulfide; pump-probe; transition metal dichalcogenides; traps; Chemistry (all); Materials Science (all); Condensed Matter Physics; Mechanics of Materials; Mechanical Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1053000
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