Monoenergetic pulsed proton beams at energies of 1 and 3 MeV per proton have been employed to characterize a segmented double-sided silicon strip detector. The detector is manufactured from a neutron transmutation doped silicon wafer and features a bulk resistivity of 2300Ωcm. Signals from both P-side and N-side strips have been digitized at 14 b, 100 MS/s. The beam was focused either in the middle of one strip or on the gap in between two strips. Energy resolution, charge collection time, and interstrip effects (charge sharing, charge losses, and inverted polarity pulses) have been investigated at different bias voltages and for particles entering either from the junction side or from the ohmic side.

Characterization of an NTD Double-Sided Silicon Strip Detector Employing a Pulsed Proton Microbeam

Parsani, T.;Riccio, F.;Castoldi, A.;Guazzoni, C.
2017-01-01

Abstract

Monoenergetic pulsed proton beams at energies of 1 and 3 MeV per proton have been employed to characterize a segmented double-sided silicon strip detector. The detector is manufactured from a neutron transmutation doped silicon wafer and features a bulk resistivity of 2300Ωcm. Signals from both P-side and N-side strips have been digitized at 14 b, 100 MS/s. The beam was focused either in the middle of one strip or on the gap in between two strips. Energy resolution, charge collection time, and interstrip effects (charge sharing, charge losses, and inverted polarity pulses) have been investigated at different bias voltages and for particles entering either from the junction side or from the ohmic side.
2017
Interstrip effects; neutron transmutation doped silicon (NTD-Si); silicon strip detector; Nuclear and High Energy Physics; Nuclear Energy and Engineering; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/1045386
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